| DC Field | Value | Language |
|---|
| dc.contributor.author | Williams, David B. | - |
| dc.date.accessioned | 2021-04-19T08:58:22Z | - |
| dc.date.available | 2021-04-19T08:58:22Z | - |
| dc.date.issued | 2009 | - |
| dc.identifier.isbn | 978-0-387-76501-3 | - |
| dc.identifier.uri | http://localhost:8080/xmlui/handle/123456789/81 | - |
| dc.description.abstract | The book consists of 40 relatively small chapters (with a few notable Carter
exceptions!). The contents of most of the chapters can be covered in a typical lecture
of 50-75 minutes (especially if you talk as fast as Williams). Furthermore, each of the
four softbound volumes is flexible enough to be usable at the TEM console so you can
check what you are seeing against what you should be seeing. Most importantly
perhaps, the softbound version is cheap enough for all serious students to buy. So
we hope you won’t have to try and work out the meaning of the many complex color
diagrams from secondhand B&W copies that you acquired from a former student. We
have deliberately used color where it is useful rather than simply for its own sake (since
all electron signals are colorless anyhow). There are numerous boxes throughout the
text, drawing your attention to key information (green), warnings about mistakes you
might easily make (amber), and dangerous practices or common errors (red).
Our approach throughout this text is to answer two fundamental questions: | en_US |
| dc.description.sponsorship | The past fifty years has been a wonderfully exciting time for electron microscopists
in materials science, with continuous rapid advances in all of its many modes and
detectors. From the development of the theory of Bragg diffraction contrast and the
column approximation, which enables us to understand TEM images of crystals and
their defects, to the theory of high-resolution microscopy useful for atomic-scale
imaging, and on into the theory of all the powerful analytic modes and associated
detectors, such as X-rays, cathodoluminescence and energy-loss spectroscopy, we
have seen steady advances. And we have always known that defect structure in most
cases controls properties — the most common (first-order) phase transitions are
initiated at special sites, and in the electronic oxides a whole zoo of charge-density
excitations and defects waits to be fully understood by electron microscopy. The
theory of phase-transformation toughening of ceramics, for example, is a wonderful
story which combines TEM observations with theory, as does that of precipitate
hardening in alloys, or the early stages of semiconductor-crystal growth. The study
of diffuse scattering from defects as a function of temperature at phase transitions is in
its infancy, yet we have a far stronger signal there than in competing X-ray methods.
The mapping of strain-fields at the nanoscale in devices, by quantitative convergent-
beam electron diffraction, was developed just in time to solve a problem listed on the
Semiconductor Roadmap (the speed of your laptop depends on strain-induced mobil-
ity enhancement). In biology, where the quantification of TEM data is taken more
seriously, we have seen three-dimensional image reconstructions of many large pro-
teins, including the ribosome (the factory which makes proteins according to DNA
instructions). Their work should be a model to the materials science community in the
constant effort toward better quantification of data | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Springer | en_US |
| dc.subject | Microscopy | en_US |
| dc.subject | Electron Microscopy | en_US |
| dc.subject | Materials Science | en_US |
| dc.subject | Transmission Electron | en_US |
| dc.title | Transmission Electron Microscopy | en_US |
| dc.title.alternative | A Textbook for Materials Science | en_US |
| dc.type | Book | en_US |
| Appears in Collections: | ARTS & SCIENCE
|
